Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements
نویسندگان
چکیده
منابع مشابه
Growth parameter investigation of AlGaN/GaN/AlN's with Hall measurements
Hall effect measurements on unintentionally doped Al0.25Ga0.75N/GaN/AlN heterostructures grown by metal organic chemical vapor deposition (MOCVD) were carried out as a function of temperature (20–300 K) and magnetic field (0–1.4 T). Magnetic-field-dependent Hall data are analyzed using the quantitative mobility spectrum analysis (QMSA) technique. The QMSA technique successfully separated electr...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2008
ISSN: 0268-1242,1361-6641
DOI: 10.1088/0268-1242/23/9/095008